Emerging 2D materials for tunneling field effect transistors

This work focuses on understanding the electronic properties of materials to enhance performance Tunnel Field Effect Transistor (TFET) through Density Functional Theory (DFT) simulations. Material selection prefers a p-type material with in-plane high density state (DOS) (and low out-of-plane effective mass, m*, where defined for many layer systems), and valence band maxima (VBM) energy stacked an n-type conduction minimum (CBM) (large electron affinity (EA)) that creates broken or nearly alignment has lattice mismatch. SnSe2 is well-suited 2D due EA, while WSe2, Black phosphorous (BP) SnSe are explored materials. Bilayers consisting monolayers WSe2 show staggered but (gap 24 meV) DOS WSe2. BP-SnSe2 shows benefits from SnSe-SnSe2 highest chemical stability, optimal in terms SnSe, tunability external field, VBM also leads alignment.